久久夜夜综合亚洲_甘雨失去尊严的图片_日本在线一中文字幕_被三个男人绑着躁我好爽_日本搞黄在线观看_影音先锋 最新AV网站_中文字幕欧洲有码无码_蜜臀色欲av无码人妻精品_国产一区在线观看播放www_日韩欧美婷婷

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

N30V Trench MOSFET for PD VBUS

MT-W Series Three Phase Bridge Rectifier

Three-phase Rectifier Module N0/N1 Product

JC

TOLL Package SiC MOSFET

SOD-123FL package power ESD

3GBJ Three-Phase Bridge Rectifier

650V Super Junction N-Channel MOSFET

New 100V 3.2mΩ SGT MOSFET for PD power supply

1200V 80 mΩ SIC MOSFET