久久夜夜综合亚洲_甘雨失去尊严的图片_日本在线一中文字幕_被三个男人绑着躁我好爽_日本搞黄在线观看_影音先锋 最新AV网站_中文字幕欧洲有码无码_蜜臀色欲av无码人妻精品_国产一区在线观看播放www_日韩欧美婷婷

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

SGT N80-85V Power MOSFET

TOLL Package SiC MOSFET

IGBT 50A/75A 1200V Discrete for Industrial Control

N40V SGT MOSFET for Automotive Motor Drives

Optimization Design of Rectifier Bridge —— New Package GBU-L

SOD-123HE TVS Diode

N+P Dual 30V Trench MOSFET for Fan Control

NP – sealed MOSFET for cooling fan

New 100V 3.2mΩ SGT MOSFET for PD power supply

N30V Trench MOSFET for PD VBUS