久久夜夜综合亚洲_甘雨失去尊严的图片_日本在线一中文字幕_被三个男人绑着躁我好爽_日本搞黄在线观看_影音先锋 最新AV网站_中文字幕欧洲有码无码_蜜臀色欲av无码人妻精品_国产一区在线观看播放www_日韩欧美婷婷

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

80A/1200V IGBT Discrete for Automotive PTC

MOSFET for High Power DC-DC

DFN1006-3L Package Small Signal Device

N150V MOSFET for Industrial Control

MT-W Series Three Phase Bridge Rectifier

N100V MOSFET for Automotive Electronic Applications

120V SGT process N-channel MOSFET

SOD-323FL Schottky

Low VCE(sat)?3A?Bipolar?Transistor

IGBT high frequency series C1 module